Transphorm Adds Two More GaN FETs to Its Gen III Product Line
New Surface Mount Devices Respond to Growing Interest in Reliable High Voltage GaN Functionality Across a Wide Range of Applications
GOLETA, Calif.–(BUSINESS WIRE)–#AECQ101—Transphorm Inc.—the leader in the design and manufacturing of the highest reliability high-voltage (HV) Gallium Nitride (GaN) semiconductors—today announced its first Gen III PQFN88 transistors. The new 650 V devices are available in two versions, the TP65H070LSG (source tab) and TP65H070LDG (drain tab), and offer an on-resistance of 72 milliohms.
Augmenting the Gen III Platform’s Renowned Reliability
Launched in June 2018, Transphorm’s Gen III devices came onto the market as the highest quality, highest reliability [Q+R] GaN FETs available. They pair a custom-designed low-voltage MOSFET with the GaN FET to offer:
- Quieter switching
- Higher performance at increased current levels with minimal external circuitry
- Increased noise immunity (threshold voltage at 4 V)
- Increased gate robustness (at +/- 20 V)
The Gen III drain and source PQFN88 packages include wider pins for increased board level reliability (BLR), which increases the reliability of multi-layer printed circuit board (PCB) designs. Offering the drain and source tab configurations also accommodates both high and low side switch locations. This provides increased radiated immunity as the large pad is soldered to the non-switching node. Further, adding PQFN88 devices to the existing list of Gen III TO-XXX FETs gives engineers an opportunity to explore GaN-driven surface mount applications using Transphorm’s latest technology.
“Our focus continues to be on increasing GaN FET reliability while delivering higher power density,” said Philip Zuk, Vice President of Technical Marketing Worldwide and North America Sales, Transphorm. “As market interest in high voltage GaN technology continues to grow, we also aim to arm our customers with device options that fit each potential application. To that end, the introduction of the 72 milliohm source and drain PQFN88 devices allows us to meet all three objectives as we fill out our current product family.”
The adoption rate of high voltage GaN power electronics is on the rise. In fact, Transphorm has announced several customers with diverse end products [ex: server and industrial power supplies, Gaming PC supplies, portable solar generators, and more] that demonstrate the technology’s value proposition.
Availability, Pricing and Support
The 650 V TP65H070LSG and TP65H070LDG (72 mΩ) FETs are currently available for US$7.47 per 1000-unit quantities. Supporting design resources include:
- TP65H070L series datasheet
- TP65H070L series spice model
- 1.2 kW half-bridge buck or boost evaluation kit [TDHBG1200DC100-KIT]
- TP65H070L half-bridge daughter card [TDHB-65H070-DC]
- Recommended External Circuitry for Transphorm GaN FETs app note
Transphorm designs and manufactures the highest performance, highest reliability 650 V and 900 V GaN semiconductors for high-voltage power conversion applications. Holding the largest IP portfolio (1000+ issued/pending), Transphorm’s devices are the industry’s first JEDEC and AEC-Q101 qualified GaN FETs.